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| JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current TC=25ae PT Total power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 ae ae Open collector Open base -60 -5 -3 -5 -0.6 10 W V A A A CONDITIONS Open emitter VALUE -70 -45 V UNIT V JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SA636 2SA636A SYMBOL MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat ICBO Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 -0.8 -2.0 V Collector cut-off current -1 |I A IEBO Emitter cut-off current VEB=-3V; IC=0 -1 |I A hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 40 250 COB Output capacitance IE=0; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.1A ; VCB=-5V 45 MHz hFE-2 classifications N 40-60 M 50-100 L 80-160 K 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA636 2SA636A Fig.2 outline dimensions 3 |
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